Δημήτριος Σκαρλάτος

• 3ου εξαμηνου:
  • Ηλεκτρομαγνητισμός I: Διδάσκων
• 4ου εξαμηνου:
  • Εργαστήριο Φυσικής IV: Εργαστήριο
• 8ου εξαμηνου:
  • *Υλικά με εφαρμογές στη Μικροηλεκτρονική: Διδάσκων
  • Εργαστήριο Τεχνικών χαρακτηρισμού υλικών: Μάθημα - Εργαστήριο
  
  

ΤΙΤΛΟΙ ΣΠΟΥΔΩΝ

1. Διδακτορικό Δίπλωμα από το Τμήμα Φυσικής της Σχολής Θετικών Επιστημών του Αριστοτελείου Παν/μίου Θεσσαλονίκης στις 29/6/2000.

 Τίτλος της Διατριβής:  «Ο ρόλος των σημειακών και εκτεταμένων ατελειών του πυριτίου στη λειτουργία των τρανζίστορ MOS».

 2. Μεταπτυχιακό Δίπλωμα Ειδίκευσης στις 8/4/1993 από τον Τομέα Φυσικής Συμπυκνωμένης Ύλης του Τμήματος Φυσικής του Πανεπιστημίου Κρήτης με έμφαση στην Φυσική Ημιαγωγών και Διατάξεων.

 3. Πτυχίο Φυσικού στις 7/9/1990 από το Τμήμα Φυσικής  του Πανεπιστημίου Αθηνών

ΕΠΑΓΓΕΛΜΑΤΙΚΗ  ΣΤΑΔΙΟΔΡΟΜΙΑ

 · Από 10/7/2007 έως  σήμερα: Επίκουρος Καθηγητής  στο Τμήμα Φυσικής του Πανεπιστημίου Πατρών

· Από 1/9/2003 έως 9/7/2007 : Συνεργαζόμενος Ερευνητής  με προσόντα Ερευνητή Δ’ (ν.1514/85) στο Ινστιτούτο Μικροηλεκτρονικής του Ε.ΚΕ.Φ.Ε «ΔΗΜΟΚΡΙΤΟΣ».

·Ακ.Έτος 2004 – 2005 έως και  Ακ.Έτος 2005 – 2006: Επιστημονικός  Συνεργάτης με πλήρη προσόντα του Τμήματος Ηλεκτρονικής του ΤΕΙ Πειραιά.

· Ακ.Έτος 2000 – 2001 έως και Ακ.Έτος 2002 – 2003 : Εργαστηριακός Συνεργάτης με πλήρη προσόντα του Τμήματος Ηλεκτρονικής του ΤΕΙ Αθήνας.

·Από 1/7/2000 έως και 31/8/2003 : Επιστημονικός Συνεργάτης του Ινστιτούτου Μικροηλεκτρονικής του Ε.ΚΕ.Φ.Ε «ΔΗΜΟΚΡΙΤΟΣ».

 ·Από 15/12/1995 έως και 15/6/2000:Υπότροφος του Ινστιτούτου Μικροηλεκτρονικής του Ε.ΚΕ.Φ.Ε «ΔΗΜΟΚΡΙΤΟΣ».  

Μικροηλεκτρονική

  και συγκεκριμένα Τεχνολογία MOS Μικρο και Νανοηλεκτρονικών διατάξεων  ημιαγωγών της Oμάδας IV (Si, strained -Si, Ge). Ειδικότερα :  (α)Πειραματική μελέτη και προσομοίωση τών φαινομένων Διάχυσης και Ενεργοποίησης  προσμίξεων σε ημιαγωγούς της Ομάδας IV [Πυρίτιο(Si),Πυρίτιο υπό μηχανική τάση(strained-Si),Γερμάνιο(Ge)] για δημιουργία ρηχών επαφών. (β) Πειραματική μελέτη της αλληλεπίδρασης σημειακών καί εκτεταμένων ατελειών σε ημιαγωγούς της Ομάδας IV.  (γ) Ανάπτυξη και χαρακτηρισμός Διηλεκτρικών Πύλης τεχνολογίας MOS ημιαγωγών της Ομάδας IV. (δ)  Διατάξεις MOS μη κλασσικής αρχιτεκτονικής [Μη πτητικές μνήμες τύπου Flash]  

1. L.F.Giles, M.Omri, B.de Mauduit, A.Claverie, D.Skarlatos, D.Tsoukalas, A.Nejim, “Coarsening of End-of-Range defects in ion-implanted silicon annealed in neutral and oxidizing ambients”, Nuclear Instruments and Methods in Physics Research, B 148, p.273- 278, 1999
2. D.Skarlatoς, M.Omri, A.Claverie and D.Tsoukalas, “Estimation of the number of interstitial atoms injected in Silicon during thin oxide formation” , Journal of the Electrochemical Society, 146(6), p.2276-2283, 1999
3. D.Tsoukalas, D.Skarlatos and J.Stoemenos , “Investigation of the interaction between silicon interstitials and dislocation loops using the wafer bonding technique”, Journal of Applied Physics, 87(12), p.8380-8384, 2000
4. D.Skarlatos, D.Tsoukalas, L.F.Giles and A.Claverie, “Point defect injection during nitrous oxidation of Silicon in the low temperature regime”, Journal of Applied Physics, 87(3), p.1103-1109, 2000
5. F.Cristiano, B.Colombeau, J.Grisolia, B.de Mauduit, L.F.Giles, M.Omri, D.Skarlatos D.Tsoukalas, and A.Claverie, “Influence of the annealing ambient on the relative thermal stability of dislocation loops in silicon”, Nuclear Instruments and Methods in Physics Research, B 178, p.84-88, 2001
6. D.Tsoukalas, D.Skarlatos and J.Stoemenos, “Investigation of the influence of a dislocation loop layer on interstitial kinetics during thermal oxidation of silicon”, Nuclear Instruments and Methods in Physics Research, B178, p.180-183, 2001
7. P.Normand, E.Kapetanakis, P.Dimitrakis, D.Skarlatos, D.Tsoukalas, K.Beltsios, A.Claverie,G.Benassayag,C.Bonafos,M.Carrada,N.Cherkashin,,V.Soncini,A.Agarwal,Ch.Sohl, M.Ameen, “Effect of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low – energy – ion beam synthesis”, Microelectronic Engineering 67 – 68, p. 629 –634, 2003
8. A.Kanjilal, J.Lundsgaard Hansen, P.Gaiduk, A.Nylandsted Larsen, N.Cherkashin, A.Claverie ,P.Normand, E.Kapetanakis, D.Skarlatos and D.Tsoukalas, “Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy”, Applied Physics Letters, 82(8), p.1212-1214, 2003
9. E.Kapetanakis, D.Skarlatos, C.Tsamis , P.Normand and D.Tsoukalas, “Influence of implantation energy on the electrical properties of ultra – thin gate oxides grown on nitrogen implanted Si - substrates”., Applied Physics Letters, 82(26), p.4764 - 4766, 2003
10. P.Dimitrakis, E.Kapetanakis, P.Normand, D.Skarlatos, D.Tsoukalas,K.Beltsios, A.Claverie, G.Benassayag, C.Bonafos, D.Chassaing,V.Soncini., “MOS memory structures by very – low – energy – implanted Si in thin SiO2”, Materials Science and Engineering B 101, p. 14 – 18, 2003
11. D.Skarlatos, C.Tsamis and D.Tsoukalas, “Oxidation of nitrogen – implanted silicon: Energy dependence of oxide growth and defect characterization of the silicon substrate”, Journal of Applied Physics, 93(3), p.1832-1838, 2003
12. P. Dimitrakis, E. Kapetanakis, D. Tsoukalas, D. Skarlatos, C. Bonafos, G. Ben Asssayag, A. Claverie, M. Perego, M. Fanciulli, V. Soncini, R. Sotgiu, A. Agarwal, M. Ameen, P. Normand , “Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam-synthesis” , Solid State Electronics, 48, p.1511-1517, 2004
13. D.Skarlatos , M.Perego , C.Tsamis , S.Ferrari , M.Fanciulli and D.Tsoukalas , “Nitrogen distribution during oxidation of low and medium energy nitrogen – implanted Silicon”, Nuclear Instruments and Methods in Physics Research, B 216, p.75-79, 2004
14. D.Skarlatos, E. Kapetanakis, P. Normand, C.Tsamis M. Perego, S.Ferrari, M. Fanciulli and D.Tsoukalas, “Oxidation of nitrogen – implanted silicon : Comparison of nitrogen distribution and electrical properties of oxides formed by very low and medium energy N2+ implantation”, Journal of Applied Physics, 96(1), p.300-309, 2004
15. P. Normand, P. Dimitrakis, E. Kapetanakis, D. Skarlatos, K. Beltsios, D. Tsoukalas, C. Bonafos, H. Coffin, G. Benassayag, A Claverie, V. Soncini, A. Agarwal, Ch. Sohl, M. Ameen, “Processing issues in silicon nanocrystal manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications”, Microelectronic Engineering, 73-74, p. 730 – 735, 2004
16. P. Normand, E. Kapetanakis, P. Dimitrakis, D. Skarlatos, K. Beltsios, D. Tsoukalas, C. Bonafos, G. Ben Asssayag, N. Cherkashin, A. Claverie, J. A.Van Den Berg, V. Soncini, A. Agarwal, M. Ameen, M. Perego, M. Fanciulli., .“Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for nonvolatile memory applications”, Nuclear Instruments and Methods in Physics Research, B 216, p.228-238, 2004
17. C.Tsamis, D.Skarlatos,V. Valamontes,G.BenAssayag, A.Claverie and W. Lerch. , “Injection of point defects during annealing of low energy arsenic – implanted Silicon”, Materials Science and Engineering B 124-125, p. 261-265, 2005
18. D.Skarlatos , C.Tsamis , M. Perego, M.Fanciulli and D.Tsoukalas. , “Interstitial injection during oxidation of very - low energy nitrogen implanted – Silicon”, Materials Science and Engineering B 124-125, p.. 314-318, 2005
19. C.Tsamis, D.Skarlatos,V. Valamontes,G.BenAssayag, A.Claverie and W. Lerch. , “Interstitial injection in silicon after high dose low energy arsenic implantation and annealing”, Applied Physics Letters 87, 201903, 2005
20. D.Skarlatos, C.Tsamis M. Perego and M. Fanciulli , “Oxidation Enhanced Diffusion of boron in very low energy N2+ - implanted Silicon ”, Journal of Applied Physics 97(1), , 2005
21. A. Chroneos , D. Skarlatos ,C. Tsamis , A. Christofi, D.S. McPhail and R. Hung, ‘‘Implantation and diffusion of phosphorous in germanium’’ , Materials Science in Semiconductor Processing (9), p.640-643, 2006
22. D. Skarlatos , P. Tsouroutas, V.Em. Vamvakas and C. Tsamis , ‘‘Non-conservative Ostwald ripening of a dislocation loop layer under inert nitrogen - rich SiO2/Si interfaces’’, Journal of Applied Physics(99), 103507, 2006
23. N. Kelaidis, D. Skarlatos, V. Ioannou-Sougleridis, C. Tsamis, Ph. Komninou, B. Kellerman and M. Seacrist, ‘‘Oxidation of very low energy nitrogen-implanted strained-silicon’’, Materials Science and Engineering B 135, p.199-202, 2006
24. D. Skarlatos and C. Tsamis, “Modeling of low energy-high dose arsenic diffusion in silicon in the presence of clustering-induced interstitial generation”, Journal of Applied Physics 102 (4), 043532, 2007
25. N.Ioannou, D.Skarlatos, C.Tsamis, C. A. Krontiras , S.N.Georga, A.Christofi and D.S.McPhail, “Germanium substrate loss during low temperature annealing and its influence on ion – implanted phosphorous dose loss”, Applied Physics Letters, 101910, 2008
26. N. Kelaidis, V. Ioannou-Sougleridis, D. Skarlatos, C. Tsamis, C. A. Krontiras , S.N.Georga , B. Kellerman and M. Seacrist, “Influence of thermal processing on the electrical characteristics of MOS capacitors on strained – silicon substrates”, Thin Solid Films (517), 350-352, 2008
27. N. Kelaidis, D. Skarlatos and C. Tsamis, “Simulations of the electrical characteristics of MOS capacitors on strained – silicon substrates”, Physica Status Solidi C 5(12), 3647 -3650, 2008
28. V.Ioannou – Sougleridis, N.Kelaidis , C.Tsamis, D.Skarlatos, S.N.Georga, C.A.Krontiras, Ph.Komninou, B. Kellerman and M. Seacrist , “Study of interfacial defects induced during the oxidation of ultrathin strained silicon layers”, Journal of Applied Physics 105(1), 114503, 2009
29. N. Ioannou, D. Skarlatos, N. Z. Vouroutzis, S. N. Georga, C. A. Krontiras and C. Tsamis, “Gallium Implantation and Diffusion in Crystalline Germanium”, Electrochemical and Solid-State Letters, 13(3), p. H70-H72, 2010
30. V.Ioannou-Sougleridis, N.Kelaidis, D.Skarlatos, C.Tsamis, S.N.Georga, C.A.Krontiras, Ph.Komninou, Th.Speliotis, P.Dimitrakis, B. Kellerman and M. Seacrist , “Influence of thermal oxidation on the interfacial properties of ultrathin Strained Silicon layers”, Thin Solid Films, p. 5456–5463, 2011
31. L.Sygellou, V.Gianneta, N.Xanthopoulos, D.Skarlatos, S.Georga, C.Krontiras, S.Ladas, S. Kennou, “ZrO2 and Al2O3 thin films on Ge(100) grown by ALD : An XPS investigation”, Surface Science Spectra Vol18, p. 58-67, 2011
32. M.Botzakaki, A.Kerasidou, L.Sygellou, V.Ioannou-Sougleridis, N.Xanthopoulos, S.Kennou, S. Ladas, N.Z.Vouroutzis, Th.Speliotis and D.Skarlatos, “Interfacial properties of ALD-deposited Al2O3 / p-type Germanium MOS structures: influence of oxidized Ge interfacial layer dependent on Al2O3 thickness” , ECS Solid State Letters, 1(2), p.32-34, 2012
33. D.Skarlatos, M.Bersani, M.Barozzi, D.Giubertoni, N.Z.Vouroutzis, V.Ioannou-Sougleridis, “Nitrogen implantation and diffusion in crystalline Germanium: implantation energy, temperature and Ge surface protection dependence”, ECS Journal of Solid State Science and Technology,1(6), p.315-319, 2012
34. N.Nikolaou, V. Ioannou-Sougleridis, P. Dimitrakis, P.Normand, D. Skarlatos, K. Giannakopoulos, K. Kukli, J. Niinistö, M. Ritala, M.Leskelä, “The effect of oxygen source in atomic layer deposited Al2O3 as blocking oxide in MANOS memory capacitors”, Thin Solid Films (accepted), p.xxxx-xxxx, 2012
35. M.Vasilopoulou, S.Kennou, S.Ladas, S. N. Georga, M.Botzakaki, D. Skarlatos, C.A. Krontiras, N.A.Stathopoulos, P.Argitis and L.C. Palilis , “Atomic layer deposited zirconium oxide electron injection layer for efficient organic light emitting diodes”, Organic Electronics: physics, materials, applications, 14 (1), p.312-319, 2013
36. D.Skarlatos, M.Bersani, M. Barozzi, N.Z.Vouroutzis, V.Ioannou-Sougleridis, “Diffusion of implanted Nitrogen in Germanium”, Physica Status Solidi C Current Topics in Solid State Physics, 10 (1), p. 60-63, 2013
37. M. Botzakaki, A. Kerasidou, N. Xanthopoulos, D. Skarlatos, S. Kennou, S. Ladas, S.N. Georga and C.A. Krontiras, “Electrical characteristics of ALD deposited Al2O3 thin films on p-typeGermanium substrates” , Physica Status Solidi C Current Topics in Solid State Physics, 10 (1), p. 137-140, 2013