Δημήτριος Σκαρλάτος
Title:
Professor
Division:
The Condensed Matter Division
Office:
Address:
Phone:
+30 2610 997475
Email:
dskar@upatras.gr
Hours Availability:
Courses

Short Bio

Dimitrios Skarlatos was born at 1966 in Athens, Greece.

Education:

A) Ph.D. Physics (29/6/2000). Department of Physics / Aristotle University of Thessaloniki-Greece

Title of Thesis : “The role of Silicon point and extended defects in MOS transistor operation”.

B) M.Sc. Condensed Matter Physics (8/4/1993). Department of Physics / University of Crete-Greece.

C) B.Sc. Physics (7/9/1990). Department of Physics / National and Kapodistrian University of Athens-Greece.

Title of Diploma Thesis : “Monte Carlo simulations of Ion Implantation”

Professional Positions: 

4/5/2015-present : Associate Professor / Department of Physics / University of Patras, Patras-Greece

12/4/2011-4/5/2015 : Permanent Assistant Professor / Department of Physics / University of Patras, Patras-Greece

10/7/2007- 12/4/2011 : Assistant Professor / Department of Physics / University of Patras, Patras-Greece

Speciallity : “Experimental Physics of Microelectronic Materials”

1/7/2000-9/7/2007: Postdoctoral Research Associate / Institute of Microelectronics / NCSR “DEMOKRITOS” / Athens-Greece

Academic years 2004-2006 : Teaching Assistant / Technological Educational Institution of Pireus / Department of Electronics / Pireus,Greece

Academic years 2000-2003 : Laboratory Assistant / Technological Educational Institution of Athens / Department of Electronics / Athens,Greece

Research Activities
  1. D.Skarlatos, M.Omri, A.Claverie and D.Tsoukalas, “Estimation of the number of interstitial atoms injected in Silicon during thin oxide formation”, Journal of the Electrochemical Society, 146(6), p.2276-2283, 1999
  2. L.F.Giles, M.Omri, B.de Mauduit, A.Claverie, D.Skarlatos, D.Tsoukalas, A.Nejim, “Coarsening of End-of-Range defects in ion-implanted silicon annealed in neutral and oxidizing ambients”, Nuclear Instruments and Methods in Physics Research, B 148, p.273- 278, 1999
  3. D.Skarlatos, D.Tsoukalas, L.F.Giles and A.Claverie, “Point defect injection during nitrous oxidation of Silicon in the low temperature regime”, Journal of Applied Physics, 87(3), p.1103-1109, 2000
  4. D.Tsoukalas, D.Skarlatos and J.Stoemenos , “Investigation of the interaction between silicon interstitials and dislocation loops using the wafer bonding technique”, Journal of Applied Physics, 87(12), p.8380-8384, 2000
  5. F.Cristiano, B.Colombeau, J.Grisolia, B.de Mauduit, L.F.Giles, M.Omri, D.Skarlatos D.Tsoukalas, and A.Claverie, “Influence of the annealing ambient on the relative thermal stability of dislocation loops in silicon”, Nuclear Instruments and Methods in Physics Research, B 178, p.84-88, 2001
  6. D.Tsoukalas, D.Skarlatos and J.Stoemenos, “Investigation of the influence of a dislocation loop layer on interstitial kinetics during thermal oxidation of silicon”, Nuclear Instruments and Methods in Physics Research, B178, p.180-183, 2001
  7. P.Normand, E.Kapetanakis, P.Dimitrakis, D.Skarlatos, D.Tsoukalas, K.Beltsios, A.Claverie, G.Benassayag, C.Bonafos, M.Carrada, N.Cherkashin, V.Soncini, A.Agarwal, Ch.Sohl, M.Ameen, “Effect of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low – energy – ion beam synthesis”, Microelectronic Engineering 67 – 68, p. 629 – 634, 2003
  8. E.Kapetanakis, D.Skarlatos, C.Tsamis , P.Normand and D.Tsoukalas, “Influence of implantation energy on the electrical properties of ultra – thin gate oxides grown on nitrogen implanted Si – substrates.”, Applied Physics Letters, 82(26), p.4764 – 4766, 2003
  9. P.Dimitrakis, E.Kapetanakis, P.Normand, D.Skarlatos, D.Tsoukalas, K.Beltsios, A.Claverie, G.Benassayag, C.Bonafos, D.Chassaing, V.Soncini., “MOS memory structures by very – low – energy – implanted Si in thin SiO2”, Materials Science and Engineering B 101, p. 14-18, 2003
  10. D.Skarlatos*, C.Tsamis and D.Tsoukalas, “Oxidation of nitrogen – implanted silicon: Energy dependence of oxide growth and defect characterization of the silicon substrate”, Journal of Applied Physics, 93(3), p.1832-1838, 2003
  11. A.Kanjilal, J.Lundsgaard Hansen, P.Gaiduk, A.Nylandsted Larsen, N.Cherkashin, A.Claverie ,P.Normand, E.Kapetanakis, D.Skarlatos and D.Tsoukalas, “Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy”, Applied Physics Letters, 82(8), p.1212-1214, 2003
  12. P. Normand, E. Kapetanakis, P. Dimitrakis, D. Skarlatos, K. Beltsios, D. Tsoukalas, C. Bonafos, G. Ben Asssayag, N. Cherkashin, A. Claverie, J. A.Van Den Berg, V. Soncini, A. Agarwal, M. Ameen, M. Perego, M. Fanciulli., “Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for nonvolatile memory applications”, Nuclear Instruments and Methods in Physics Research, B 216, p.228-238, 2004
  13. D.Skarlatos* , M.Perego , C.Tsamis , S.Ferrari , M.Fanciulli and D.Tsoukalas , “Nitrogen distribution during oxidation of low and medium energy nitrogen – implanted Silicon”, Nuclear Instruments and Methods in Physics Research, B 216, p.75-79, 2004
  14. D.Skarlatos*, E. Kapetanakis, P. Normand, C.Tsamis M. Perego, S.Ferrari, M. Fanciulli and D.Tsoukalas, “Oxidation of nitrogen – implanted silicon : Comparison of nitrogen distribution and electrical properties of oxides formed by very low and medium energy N2+ implantation”, Journal of Applied Physics, 96(1), p.300-309, 2004
  15. P. Normand, P. Dimitrakis, E. Kapetanakis, D. Skarlatos, K. Beltsios, D. Tsoukalas, C. Bonafos, H. Coffin, G. Benassayag, A Claverie, V. Soncini, A. Agarwal, Ch. Sohl, M. Ameen, “Processing issues in silicon nanocrystal manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications”, Microelectronic Engineering, 73-74, p. 730 – 735, 2004
  16. P. Dimitrakis, E. Kapetanakis, D. Tsoukalas, D. Skarlatos, C. Bonafos, G. Ben Asssayag, A. Claverie, M. Perego, M. Fanciulli, V. Soncini, R. Sotgiu, A. Agarwal, M. Ameen, P. Normand , “Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam-synthesis”, Solid State Electronics, 48, p.1511-1517, 2004
  17. C.Tsamis, D.Skarlatos,V. Valamontes,G.BenAssayag, A.Claverie and W. Lerch. , “Injection of point defects during annealing of low energy arsenic – implanted Silicon”, Materials Science and Engineering B 124-125, p. 261-265, 2005
  18. D.Skarlatos* , C.Tsamis , M. Perego, M.Fanciulli and D.Tsoukalas. , “Interstitial injection during oxidation of very – low energy nitrogen implanted – Silicon”, Materials Science and Engineering B 124-125, p.. 314-318, 2005
  19. C.Tsamis, D.Skarlatos,V. Valamontes,G.BenAssayag, A.Claverie and W. Lerch. , “Interstitial injection in silicon after high dose low energy arsenic implantation and annealing”, Applied Physics Letters 87, 201903, 2005
  20. D.Skarlatos*, C.Tsamis M. Perego and M. Fanciulli , “Oxidation Enhanced Diffusion of boron in very low energy N2+ – implanted Silicon”, Journal of Applied Physics 97(1), , 2005
  21. A. Chroneos , D. Skarlatos ,C. Tsamis , A. Christofi, D.S. McPhail and R. Hung, “Implantation and diffusion of phosphorous in germanium”, Materials Science in Semiconductor Processing (9), p.640-643, 2006
  22. D. Skarlatos* , P. Tsouroutas, V.Em. Vamvakas and C. Tsamis , “Non-conservative Ostwald ripening of a dislocation loop layer under inert nitrogen – rich SiO2/Si interfaces”, Journal of Applied Physics(99), 103507, 2006
  23. N. Kelaidis, D. Skarlatos, V. Ioannou-Sougleridis, C. Tsamis, Ph. Komninou, B. Kellerman and M. Seacrist, “Oxidation of very low energy nitrogen-implanted strained-silicon”, Materials Science and Engineering B 135, p.199-202, 2006
  24. D. Skarlatos* and C. Tsamis, “Modeling of low energy-high dose arsenic diffusion in silicon in the presence of clustering-induced interstitial generation”, Journal of Applied Physics 102 (4), 043532, 2007
  25. N.Ioannou, D.Skarlatos*, C.Tsamis, C. A. Krontiras , S.N.Georga, A.Christofi and D.S.McPhail, “Germanium substrate loss during low temperature annealing and its influence on ion – implanted phosphorous dose loss”, Applied Physics Letters, 101910, 2008
  26. N. Kelaidis, V. Ioannou-Sougleridis, D. Skarlatos, C. Tsamis, C. A. Krontiras , S.N.Georga , B. Kellerman and M. Seacrist, “Influence of thermal processing on the electrical characteristics of MOS capacitors on strained – silicon substrates”, Thin Solid Films (517), 350-352, 2008
  27. N. Kelaidis, D. Skarlatos and C. Tsamis, “Simulations of the electrical characteristics of MOS capacitors on strained – silicon substrates”, Physica Status Solidi C 5(12), 3647 -3650, 2008
  28. V.Ioannou – Sougleridis, N.Kelaidis, C.Tsamis, D.Skarlatos, S.N.Georga, C.A.Krontiras, Ph.Komninou, B. Kellerman and M. Seacrist , “Study of interfacial defects induced during the oxidation of ultrathin strained silicon layers”, Journal of Applied Physics 105(1), 114503, 2009
  29. N. Ioannou, D. Skarlatos*, N. Z. Vouroutzis, S. N. Georga, C. A. Krontiras and C. Tsamis, “Gallium Implantation and Diffusion in Crystalline Germanium”, Electrochemical and Solid-State Letters, 13(3), p. H70-H72, 2010
  30. V.Ioannou – Sougleridis, N.Kelaidis, D.Skarlatos, C.Tsamis, S.N.Georga, C.A.Krontiras, Ph.Komninou, Th.Speliotis, P.Dimitrakis, B. Kellerman and M. Seacrist , “Influence of thermal oxidation on the interfacial properties of ultrathin Strained Silicon layers”, Thin Solid Films, p. 5456-5463, 2011
  31. L.Sygellou, V.Gianneta, N.Xanthopoulos, D.Skarlatos, S.Georga, C.Krontiras, S.Ladas, S. Kennou, “ZrO2 and Al2O3 thin films on Ge(100) grown by ALD : An XPS investigation”, Surface Science Spectra Vol18, p. 58-67, 2011
  32. M.Botzakaki, A.Kerasidou, L.Sygellou, V.Ioannou-Sougleridis, N.Xanthopoulos, S.Kennou, S. Ladas, N.Z.Vouroutzis, Th.Speliotis and D.Skarlatos*, “Interfacial properties of ALD-deposited Al2O3 / p-type Germanium MOS structures: influence of oxidized Ge interfacial layer dependent on Al2O3 thickness”, ECS Solid State Letters, 1(2), p.32-34, 2012
  33. D.Skarlatos*, M.Bersani, M.Barozzi, D.Giubertoni, N.Z.Vouroutzis, V.Ioannou-Sougleridis, “Nitrogen implantation and diffusion in crystalline Germanium: implantation energy, temperature and Ge surface protection dependence”, ECS Journal of Solid State Science and Technology,1(6), p.315-319, 2012
  34. M.Vasilopoulou, S.Kennou, S.Ladas, S. N. Georga, M.Botzakaki, D. Skarlatos, C.A. Krontiras, N.A.Stathopoulos, P.Argitis and L.C. Palilis , “Atomic layer deposited zirconium oxide electron injection layer for efficient organic light emitting diodes”, Organic Electronics: physics, materials, applications, 14 (1), p.312-319, 2013
  35. D.Skarlatos*, M.Bersani, M. Barozzi, N.Z.Vouroutzis, V.Ioannou-Sougleridis, “Diffusion of implanted Nitrogen in Germanium”, Physica Status Solidi C Current Topics in Solid State Physics, 10 (1), p. 60-63, 2013
  36. M. Botzakaki, A. Kerasidou, N. Xanthopoulos, D. Skarlatos, S. Kennou, S. Ladas, S.N. Georga and C.A. Krontiras, “Electrical characteristics of ALD deposited Al2O3 thin films on p-typeGermanium substrates”, Physica Status Solidi C Current Topics in Solid State Physics, 10 (1), p. 137-140, 2013
  37. N.Nikolaou*, V. Ioannou-Sougleridis, P. Dimitrakis, P.Normand, D. Skarlatos, K. Giannakopoulos, K. Kukli, J. Niinisto, M. Ritala, M.Leskela, “The effect of oxygen source in atomic layer deposited Al2O3 as blocking oxide in MANOS memory capacitors”, Thin Solid Films (533), p.5-8, 2013
  38. Nikolaos Nikolaou*, Panagiotis Dimitrakis, Pascal Normand, Dimitrios Skarlatos, Konstantinos Giannakopoulos, Konstantina Mergia, Vassilios Ioannou-Sougleridis, Kaupo Kukli, Jaakko Niinisto, Mikko Ritala, Markku Leskela, Inert ambient annealing effect on MANOS capacitor memory characteristics, Nanotechnology (26), artno134004, 2015
  39. N. Nikolaou* , V. Ioannou-Sougleridis , P. Dimitrakis , P. Normand , D. Skarlatos ,K. Giannakopoulos , S. Ladas, B. Pecassou , G. BenAssayag , K. Kukli , J. Niinistö , M. Ritala ,M. Leskelä, Nitrogen induced modifications of MANOS memory properties, Nuclear Instruments and Methods in Physics Research B, 365(A), 61-65, 2015
  40. C.Thomidis, M.Barozzi, M.Bersani, V.Ioannou-Sougleridis, N.Z.Vouroutzis, B.Colombeau and D.Skarlatos*, Strong diffusion suppression of low energy – implanted Phosphorous in Germanium by N2 co-implantation, ECS Solid State Letters, 4 (6) [OPEN ACCESS], P47-P50, 2015
  41. V.Ioannou-Sougleridis, A.Karageorgiou,M.Barlas,S.Ladas,D.Skarlatos, “Interface properties of Al-Al2O3-Ge MIS capacitors and the effect of forming gas annealing”, Microelectronic Engineering (159), 84-89, 2016
  42. D.Skarlatos*, V.Ioannou-Sougleridis, M.Barozzi, G.Pepponi, D.Velessiotis, M.C. Skoulikidou, N.Z.Vouroutzis, K. Papagelis, P. Dimitrakis, C.Thomidis, B.Colombeau, “Phosphorous diffusion in N2+-implanted Germanium during Flash Lamp Annealing: Influence of Nitrogen on Ge substrate damage and capping layer engineering”, ECS Journal of Solid State Science and Technology, 6 (7) [OPEN ACCESS], P. 418-428, 2017
  43. D. Skarlatos*, V. Ioannou-Sougleridis, M. Barozzi, G. Pepponi, N. Z. Vouroutzis, D. Velessiotis, J. Stoemenos, N. Zographos, B. Colombeau , (Invited)”Issues with n-type Dopants in Germanium”, ECS Transactions, 86(10), 51-58 , 2018
  44. A.Balliou, D.Skarlatos, G.Papadimitropoulos, N.Z.Vouroutzis, N.Boukos, N.Glezos, “Molecular/Nanostructured Functional Metal Oxide Stacks for Nanoscale Nanosecond Information Storage”, Advanced Functional Materials, 29(51), artno1902642, 2019
  45. V. Ioannou-Sougleridis*, S. Alafakis, N.Z. Vouroutzis, K. Mergia, A. Speliotis and D. Skarlatos* , “Degradation of Pt-Al2O3-Ge Metal oxide semiconductor structures due to Pt-Al2O3 induced reactions”, ECS Journal of Solid State Science and Technology,(9), artno024003, 2020
  46. D.Skarlatos*, D.Velessiotis, M.C. Skoulikidou, V.Ioannou-Sougleridis, N.Z.Vouroutzis, J. Stoemenos, “Substrate damage in ion-implanted (100) Germanium after extended ms Flash Lamp Annealing: origins and suppression “, Materials Science in Semiconductor Processing (122), artno105477, 2021
  47. V. Ioannou-Sougleridis, S. Alafakis, B. Pécz, D. Velessiotis, N. Z. Vouroutzis, S. Ladas, M. Barozzi, G. Pepponi and D. Skarlatos*,“Post metallization annealing and photolithography effects in p-type Ge/Al2O3/Al  MOS structures”, ECS Journal of Solid State Science and Technology, 11, artno105477, 2022
  48. A. Dokouzis*, J. Zhang, D. Skarlatos, G. Leftheriotis, “Electrochemical evaluation of barrier layers for photoelectrochromic devices”, Electrochimica Acta, 464, artno142941,  2023
  49. V.Lionas*, D. Velessiotis, G. Pilatos, Th Speliotis, K. Giannakopoulos, A. Kyriakis, D. Skarlatos, N. Glezos, “Photodetectors based on chemical vapor deposition or liquid processed multi-wall carbon nanotubes”, Optical Materials, 143, artno114283, 2023
  50. V.Lionas*, D. Velessiotis, G. Pilatos, K. Giannakopoulos, A. Kyriakis,  N. Glezos, D. Skarlatos, “Optimizing fabrication and performance of liquid‐processed carbon nanotube photodetectors on various substrates”, Appl. Res.,e202300121,  2024